Electron and hole transfer from indium phosphide quantum dots

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Abstract

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N′,N′-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO 2) films. Core-confined holes are effectively quenched by TMPD, resulting in a new ∼4-ps component in the TA decay. It is found that electron transfer to TiO 2 is primarily mediated through surface-localized states on the InP QDs. © 2005 American Chemical Society.

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Blackburn, J. L., Selmarten, D. C., Ellingson, R. J., Jones, M., Micic, O., & Norik, A. J. (2005). Electron and hole transfer from indium phosphide quantum dots. Journal of Physical Chemistry B, 109(7), 2625–2631. https://doi.org/10.1021/jp046781y

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