Trap-assisted tunnelling current in MIM structures

Abstract

A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided. © 2010 Versita Warsaw and Springer-Verlag Berlin Heidelberg.