Engineering of Shallow Layers of Nitrogen Vacancy Colour Centres in Diamond Using Plasma Immersion Ion Implantation

Abstract

Sensing nano-scale magnetic field sources is at the heart of many applications in nano-science and biology. Given its very small size and high magnetic sensitivity, the nitrogen vacancy (NV) colour centre in diamond is one of the leading candidates for such applications. However, issues regarding the stability and performance of the NV centre near the diamond’s surface are the major obstacle in the practical realization of theses sensors. So far, conventional implantation and growth techniques did not produce practical and/or repeatable solutions to this problem. In this report, we show first results of shallow layers of NVs created using plasma immersion ion implantation (PIII). We show, using Forster Resonance Energy Transfer (FRET), that most NVs are within 3.6 nm from the diamond’s surface. Despite the relatively low quality of the diamond substrates used and the simplicity of our PIII system, we have an estimated magnetic sensitivity of around 2.29 μT/Hz⋅μm−2.