Abstract
Grazing incidence x-ray diffraction experiments employing the asymmetric (202) Bragg diffraction have been performed to characterize self-assembled InAs quantum dots grown by molecular-beam epitaxy. We find that the strain is elastically relaxed with different components. The volume distribution of partially strained InAs inside islands is peaked at intermediate strain values. The fraction of both almost fully strained and totally relaxed InAs is found to be small. In addition, a small volume fraction of relaxed InxGa1-xAs is found. © 2000 American Institute of Physics.
Cite
CITATION STYLE
Zhang, K., Heyn, C., Hansen, W., Schmidt, T., & Falta, J. (2000). Strain status of self-assembled InAs quantum dots. Applied Physics Letters, 77(9), 1295–1297. https://doi.org/10.1063/1.1290152
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
