Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy

Abstract

We demonstrated the growth of high-quality and compressive-stressed single-crystal c-GaN on (2 01) β-Ga2O3 utilizing metal organic vapor phase epitaxy. Rectification behavior of the n-GaN/n-Ga2O3 isotype heterojunction was observed. Valence and conduction band offsets were determined to be 1.625 eV ± 0.07 eV and -0.165 eV ± 0.07 eV, respectively, confirming a type-II heterojunction due to the polarization effect. The extracted forward (0.702 V) and reverse (0.178 V) turn-on voltages could be ascribed to the band bending (0.695 eV) effect and the conduction band offset, respectively. The present work may lead to a deeper understanding of the GaN/β-Ga2O3 heterojunction and play a guiding role in the development of the GaN-based vertical structure light-emitting diodes on β-Ga2O3.