Single Ion Implantation of Bismuth

Abstract

Herein, the results from a focused ion beam instrument, designed to implant single ions with a view to the fabrication of qubits for quantum technologies, are presented. The difficulty of single ion implantation is accurately counting the ion impacts. This is achieved here through the detection of secondary electrons generated upon each ion impact. The implantation of single bismuth ions with different charge states into Si, Ge, Cu, and Au substrates is reported, and the counting detection efficiency for single ion implants and the factors that affect such detection efficiencies are determined. It is found that for 50 keV implants of Bi++ ions into silicon an 89% detection efficiency can be achieved, which is the first quantitative detection efficiency measurement for single ion implants into silicon without implanting through a thick SiO2 film. This level of counting accuracy provides implantation of single impurity ions with a success rate significantly exceeding that achievable by random (Poissonian) implantation.