To improve the infrared (IR) response, a high-refractive-index intrinsic amorphous silicon (a-Si:H) layer is introduced after metallization of bifacial silicon heterojunction (SHJ) solar cells, resulting in a transparent conductive oxide (TCO)/a-Si:H back reflector, which functions like distributed Bragg reflector (DBR). This concept is demonstrated by both Sentaurus Technology Computer-Aided Design (TCAD) simulation and experimental methods. The TCO/a-Si:H back reflector can increase rear internal reflectance by reducing the transmission loss, thus improving the IR external quantum efficiency. The using of Sn-doped In2O3 (ITO)/a-Si:H back reflector in >23.5% efficiency SHJ solar cells can improve short-circuit current density by 0.4 mA cm−2 which is quite similar as using the more expensive ITO/Ag back reflector, while keeping a cell bifaciality of 55%. This brings its advantage for monofacial application case. Future studies would be nice to work on higher transparent back reflectors to broaden the application in bifacial case. This back-reflector design promotes IR response of SHJ solar cells with transferring to a wide variety of TCOs.
CITATION STYLE
Duan, W., Bittkau, K., Lambertz, A., Qiu, K., Yao, Z., Steuter, P., … Ding, K. (2021). Improved Infrared Light Management with Transparent Conductive Oxide/Amorphous Silicon Back Reflector in High-Efficiency Silicon Heterojunction Solar Cells. Solar RRL, 5(3). https://doi.org/10.1002/solr.202000576
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