Obstruction of modern silicon semiconductor and its future development

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Abstract

In the past 50 years, silicon-based semiconductors have progressed rapidly, billions of transistors have been packed into a tiny area, and computer performance has increased by leaps and bounds; everything is systematically following Moore's Law. In recent years, however, silicon transistors research and development has stagnated to a considerably lesser amount than in the past. Due to the material's physical property, humans are unable to prevent silicon from reaching its physical constraints in both power and chip semiconductors as a result of advances in process technology and human technological requirements. Now, scientists are attempting several solutions to this problem. In the future, scientists will find a better material to replace silicon, alter the architectures of FETs, and create a new transistor with a completely different operating principle. This paper explores these three general directions for new types of semiconductors with a literature review method and based on current research findings. This paper is a good way to summarize what humans have accomplished to date and could serve as a guide for future endeavors.

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APA

Sheng, T. (2023). Obstruction of modern silicon semiconductor and its future development. In Journal of Physics: Conference Series (Vol. 2608). Institute of Physics. https://doi.org/10.1088/1742-6596/2608/1/012024

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