Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Ye, P. D., Wilk, G. D., Yang, B., Kwo, J., Gossmann, H. J. L., Hong, M., … Bude, J. (2004). Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition. Applied Physics Letters, 84(3), 434–436. https://doi.org/10.1063/1.1641527