Determination of the d31 piezoelectric coefficient of PbZr xTi1-xO3 thin films using multilayer buckled micromembranes

Abstract

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO 3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built and used for the calculation of d 31 starting with the static profiles of the microfabricated devices determined by means of a double-beam interferometer. The influence of dc voltage and buckling effects on the J31 piezoelectric coefficient at the microscale were investigated, and high values were obtained, from 30 to 75 pm/V, within a hysteresyslike cycle. These results demonstrated the good electrical behavior of PZT thin films at the microscale with a low influence of buckling effects and determined optimal operation conditions for high values of d 31. © 2006 American Institute of Physics.