Highly conductive co-doped ga2 o3:Si-in grown by mocvd

Abstract

We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm2 /V·s with the carrier concentration near 2 × 1017 cm−3 . However, if not doped with silicon, both Ga2 O3:In and Ga2 O3 are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels.