Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique

Abstract

Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Suc-cessive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, in-dium chloride (InCl 3) and indium nitrate (In(NO 3) 3) and post deposition annealing were also studied. Films fabricated with In(NO 3) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposi-tion conditions.