Abstract
CuInSe2(1-x)S2xthin films were deposited by spray pyrolysis. Lattice parameters a and c, for all composition parameters X, were calculated from the Phillips X-ray diffractometer. The structure remained tetragonal chalcopyrite throughout. Optical band gap (Eg) was determined for the composition parameter X from the transmittance study at room temperature. Variation of Eg, a and c with X was found to be linear. © 1992 Indian Academy of Sciences.
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Tembhurkar, Y. D., & Hirde, J. P. (1992). Band gap and structural parameter variation of CuInSe2(1-x)S2x solid-solution in the form of thin films. Bulletin of Materials Science, 15(2), 143–148. https://doi.org/10.1007/BF02927439
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