Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a very high peak-to-valley ratio (∼106) and adjustable operating range characteristics was successfully demonstrated using a ZnO and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene heterojunction structure. The entire device integration was completed at a low thermal budget of less than 200 °C, which makes this AAS device compatible with monolithic 3D integration. A 1-trit ternary full adder designed with this AAS device exhibits excellent power-delay product performance (∼122 aJ) with extremely low power (∼0.15 μW, 7 times lower than the reference circuit) and lower device count than those of other ternary device candidates.
CITATION STYLE
Lee, Y., Kim, S., Lee, H. I., Kim, S. M., Kim, S. Y., Kim, K., … Lee, B. H. (2022). Demonstration of Anti-ambipolar Switch and Its Applications for Extremely Low Power Ternary Logic Circuits. ACS Nano, 16(7), 10994–11003. https://doi.org/10.1021/acsnano.2c03523
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