Abstract
Highly oriented thin films of Fe3O4 were deposited on (100) LaAlO3 substrates by pulsed laser ablation. The structural quality of the films was confirmed by X-ray diffraction (XRD). The films showed a Verwey transition near 120 K. The films were subjected to 80 keV Ar+ implantation at different ion doses up to a maximum of 6 × 1014 ions/cm2. Ion beam induced modifications in the films were investigated using XRD and resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 × 1014 ions/cm2. The Verwey transition temperature, Tv, shifts towards lower temperatures with increase in ion dose.
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Lanke, U. D. (2001). Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films. Bulletin of Materials Science, 24(1), 35–38. https://doi.org/10.1007/BF02704837
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