Effect of Sputtering Power on the Properties of TaN Thin Films Prepared by the Magnetron Sputtering

Abstract

Al doped ZnO(AZO) thin films were prepared by direct current(DC) magnetron sputtering on general floating glass using ZnO:Al2O3 ceramic as sputtering targets. The effect of sputtering pressure on the microstructure and surface morphology, photoelectric properties of AZO films were investigated. According to XRD and SEM test results, all samples obtained were polycrystalline, hexagonal wurtzite structure with oriented in the (002) crystallographic direction. After etched by 0.5% dilute hydrochloric acid, these AZO films showed different surface morphology under various sputtering pressures. AZO thin film surface had a certain light trapping structure with crater-type morphology could be obtained through the processing of etching after sputtered, under appropriate sputtering pressure of ~1.5 mTorr. The hazes of AZO thin films were different with various morphologies. At the same time by optimizing the preparation process, the average transmissions of AZO thin films were more than 80% in the visible and near-infrared range and the resistivities of these films were less than 8.5×10-4 Ω·cm, that is suitable for silicon based thin film solar cells as transparent front electrode.