High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

Abstract

A high Hall-effect mobility of 1,250 cm2V1s-1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film on a SiO2/Si substrate was successfully achieved by a higherature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved to 1,250 cm2V-1s-1 and 8.5 × 1017 cm-3, simultaneously. High-mobility two-dimensional ZrS2 film is a strong candidate for advanced MISFETs.