Electronic structures of natural quantum-dot system; Si stacking-fault tetrahedron

Abstract

Electronic structures of the Si stacking-fault tetrahedron (SFT) are studied, by using the first-principles calculations. It is shown that the electron and hole states of bulk Si are localized around the SFT faces, the SFT ridges, and the SFT apexes. This feature occurs due to the unique atomic geometries in these structures, such as stacking-fault layers, dimer bonds, and the Si-dome structures. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.