Abstract
Films of pseudohexagonal Bi2Te3, Bi2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.
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CITATION STYLE
Liu, X., Smith, D. J., Cao, H., Chen, Y. P., Fan, J., Zhang, Y.-H., … Furdyna, J. K. (2012). Characterization of Bi2Te3 and Bi2Se3 topological insulators grown by MBE on (001) GaAs substrates. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 30(2). https://doi.org/10.1116/1.3668082
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