Abstract
PbS nanocrystal (nc-PbS) - C60 photovoltaic devices are demonstrated, in which nc-PbS function as electron donors, showing infrared photosensitivity up to 1600 nm. Annealing nc-PbS is proved to remove capping oleic acid ligands, studied using x-ray photoelectron spectroscopy, significantly improving the short circuit current, open circuit voltage, and fill factor. The device performance is rationalized by quantum confinement in nc-PbS and energy level alignment at the heterojunction based on direct measurements of nc-PbS ionization potential using ultraviolet photoelectron spectroscopy. © 2007 American Institute of Physics.
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CITATION STYLE
Dissanayake, D. M. N. M., Hatton, R. A., Lutz, T., Giusca, C. E., Curry, R. J., & Silva, S. R. P. (2007). A PbS nanocrystal- C60 photovoltaic device for infrared light harvesting. Applied Physics Letters, 91(13). https://doi.org/10.1063/1.2790730
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