Memristive behavior in In2Se3 asymmetrical hetero-structures

Abstract

Based on Ag/In2Se3/ITO and Ta/In2Se3/ITO asymmetrical heterostructures, several memristive samples were prepared by the magnetron sputtering method. The In2Se3 core layer is in the γ-phase, as determined by XRD and Raman spectroscopy measurements. Current-voltage measurements reveal the bipolar resistive switching characteristics at room temperature. The underlying mechanism can be well interpreted by the space-charge limited conduction effect with redistribution and migration of charged defects responsible for the switching effect. The achieved bipolar resistive switching behaviour of the In2Se3 samples can be adjusted by transforming different electrodes. It seems to be a promising candidate in prospective nonvolatile memory and neuromorphic circuit applications.