Photoluminescence and Raman characterization from Er-implanted In x Ga 1-x As bulk crystal

Abstract

InxGa1-xAs bulk crystal is a lattice-matched substrate material for InGaAs-based laser diodes. We prepared an InxGa1-xAs with compositional fractions x ranging from 0 to 0.2 and the effect of Er impurity on the photoluminescence (PL) and Raman characterization of an Er-implanted InxGa1-xAs bulk crystal was studied. From the results of PL and Raman spectroscopy, it was found that the implantation damage in InxGa1-xAs:Er sample is recovered at a temperature of 700 degrees C by the thermal annealing. Maximum PL intensity of Er-related emission was obtained for the InxGa1-xAs:Er sample annealed at 700 degrees C in the compositional fractions ranging from 0 to 0.2.