Abstract
III-V InGaP/InGaAs/Ge triple junction solar cells have been developed which incorporate quantum wells into the InGaAs and InGaP junctions. Characterization of such devices shows an absolute efficiency gain of up to 2% with Voc exceeding that of non-QW devices. Cells grown on 6′ wafers with quantum wells in the InGaAs junction are now commercially available with median efficiencies above 41%.
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Browne, B., Lacey, J., Tibbits, T., Bacchin, G., Wu, T. C., Liu, J. Q., … Werthen, J. G. (2013). Triple-junction quantum-well solar cells in commercial production. In AIP Conference Proceedings (Vol. 1556, pp. 3–5). American Institute of Physics Inc. https://doi.org/10.1063/1.4822185
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