Electrical Conduction Anomaly of Semiconducting Glasses in the System As—Te—I

Abstract

The transformation from one resistance state to another by glasses in the system As‐Te‐I is discussed and a model is postulated. The anomalous behavior of the electrical properties of glasses in this system is shown to result from thermal breakdown of the dielectric during which reversible glass‐to‐crystal phase transformation occurs. Results of compositional studies and the measurement of the electrical characteristics of resistivity, Seebeck coefficients, and current‐voltage curves are given. Resistivities of 103 to > 107 ohm‐cm and Seebeck coefficients of +800 to ±4300μv per OC were measured for glasses in this system. Copyright © 1964, Wiley Blackwell. All rights reserved