Fabrication of Two-dimensional MoS2 Films-based Field Effect Transistor for High Mobility Electronic Device Application

Abstract

The two-dimensional layered MoS(2) has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. MoS(2) is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-MoS(2) and MoS(2)-MoS(2) heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, MoS(2) can easily be exfoliated physically or chemically. During the MoS(2) field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-MoS(2) gap, and leads to the problem of a rapid decline in the material’s yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic MoS(2) field effect transistor (FET) was fabricated on a hydrophilic SiO(2) substrate via chemical vapor deposition CVD. To solve the problem of MoS(2) exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a MoS(2) film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.