Abstract
By varying growth temperature, ab abrupt change in density and absorption edge energy is produced in amorphous Ge films. For 25 - 200°C the absorption edge occurs at 0.6 eV and the density is less than crystalline Ge. For 250 - 300°C the edge occurs near 0.8 eV and the edge density is close to the crystalline density. © 1970.
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CITATION STYLE
APA
Donovan, T. M., Ashley, E. J., & Spicer, W. E. (1970). A high density form of amorphous Ge. Physics Letters A, 32(2), 85–86. https://doi.org/10.1016/0375-9601(70)90101-5
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