Megahertz operation of vertical organic transistors for ultra-high resolution active-matrix display

Abstract

Organic field-effect transistors (OFETs) are the technology of choice for flexible electronic devices such as active-matrix (AM) displays. However, despite the continuous improvement of charge carrier mobility in organic semiconductors, the performance of conventional OFETs is too poor for demanding electronic applications. Furthermore, hero-devices reported in literature often make use of processes (shadow mask fabrication, large channel width devices) which cannot be adapted in production lines, e.g. for AM displays. Here we present an OFET with a novel vertical device structure. It has static and dynamic transistor performance superior over conventional lateral organic transistors with regard to application in AM displays. We show that these vertical transistors can be integrated using processes well-established in the micro-electronic industry and thus offer seamless transfer into production lines. We discuss that these transistors obey scaling laws for footprint and capacitance which make them superior over other planar transistor devices. In combination with excellent device stability and uniformity, vertical OFET might enable ultra-high resolution flexible displays of the future.