Focused Ion Beam Lithography

Abstract

The focused ion beam (FIB) lithography systems, JIBL-150 and JIBL-200S have been developed, and are now in operation. These systems are available for resist exposure and maskless ion implantation. The deflection accuracy is measured to be 0.025 mu m in 3 sigma , and for the moving stage system with the laser interferometer feedback, the stitching accuracy, and the overlay accuracy are measured to be 0.18 mu m and 0.24 mu m in 3 sigma respectively for each system