Ferroelectric field effect transistor based on modulation doped CdTe/CdMgTe quantum wells

Abstract

In this work, we observed effects of changing the electron concentration and electron mobility upon the poling of the Cd0.96Zn 0.04Te ferroelectric gate deposited on the top of the CdTe-based modulation doped quantum well structure, which are confirmation of the existence of the electrostatic field originating from the ferroelectric material, which can be controlled by an external voltage. The analysis of the data obtained from the Hall effect measurements showed that the electron mobility and carrier concentration decreased by a factor of 2.5 and 1.5, respectively upon the negative poling of the gate with respect to the poled by the positive voltage. Moreover, the electrostatic field, depending on its directions, causes depletion of accumulation of electrons in the 2D channel, i.e., it is a source of the field effect.