Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots

Abstract

Surface-sensitive X-ray diffraction analysis of self-assembled InAs/GaAs quantum dots results in tomographic nanometer-scale images. The shape of dots along with the lattice parameter distribution and the vertical-interdiffusion profile on a subnanometer scale are analyzed. It is shown that the material composition varies continuously from InAs at the top to GaAs at the base of the dot.