Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

Abstract

In this work, we demonstrate highly scaled, non-volatile memory transistors with ferroelectric Zr-doped HfO2(HZO) as gate insulator. {\Omega } -gate transistors with gate length 30 nm and width 85 nm were fabricated on 20 nm thick SOI. We demonstrate robust memory operation with ≤100 ns program and erase speed at ±5 V, projected memory retention time up to 10 years at 85 °C, and 0.5 V memory window after 108 endurance cycles. The impact of {V}{-text {D}} on erase speed provides insights into the importance of holes on memory operation.