Analyzing Transfer Characteristics of Disordered Polymer Field-Effect Transistors for Intrinsic Device Parameter Extraction

Abstract

In this study, we present an intrinsic device parameter method based on a single device for disordered polymer field-effect transistors (PFETs). Charges in disordered polymer semiconductors transport through localized states via thermally activated hopping, of which field-effect mobility and contact resistance are gate-bias-dependent. By considering the parameters expressed as gate bias-dependent power laws, dividing drain current with transconductance (Ids/gm method) leads to the current–voltage relation decoupled from the contact effect. Following this derived relationship, the intrinsic field-effect mobility and the contact resistance of the PFETs are extracted and found to be consistent with those using the four-probe method. Thus, we can state that the proposed method offers practical benefits for extracting the intrinsic device parameters of disordered PFETs in terms of using a single transfer characteristic of the devices.