TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Abstract

In this paper, we present a (scanning) transmission electron microscopy analysis of novel Ge-on-Si MOSFETs which incorporate a high-k HfO2 dielectric and TaN/TiN metal gate electrodes. A key feature of these devices is the incorporation of a very thin (∼1nm) Si passivation layer on top of the Ge virtual substrate, which is partially oxided to form SiO2 (∼0.5nm), before depositing the HfO2 dielectric and TaN and TiN metal gate electrodes. Our results confirm the architecture of the device structures and the existence of Si passivation. © 2010 IOP Publishing Ltd.