Effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted (001) Si

Abstract

In high-dose As+ implanted silicon, defect clusters were observed to form around the projected ion range (Rp loops) and the original a/c interface (end-of-range (EOR) defects) following post-implantation annealing. In this article, we report the effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted silicon. Single-crystal, 3-5 Ω cm, phosphorous-doped (001) Si wafers were implanted with 150 keV As+ to a dose of of 5 × 1015/cm2 at room temperature or at liquid-nitrogen (LN2) temperature (RT and LT samples). The annealing behavior of residual defects was found to be vastly different for RT and LT samples. In RT samples, the EOR defects were present in samples annealed at 600-900°C. However, no EOR defects survived in LT samples annealed at a temperature as low as 700°C. The average size and density of the Rp loops were measured to be smaller and higher, respectively, in LT samples than in RT samples. The implantation of As+ at LN2 temperature appears to be a promising technique for microelectronics devices processing. © 1991.