Abstract
We present a theory of deformation potential carrier scattering of two-dimensional electron gases from the strain fields surrounding edge dislocations. The scattering rate is evaluated in closed form without any fitting parameters. The result is directed towards understanding mobility limiting scattering mechanisms for two-dimensional electron gases at AlGaN/GaN heterointerfaces. © 2002 American Institute of Physics.
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CITATION STYLE
Jena, D., & Mishra, U. K. (2002). Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases. Applied Physics Letters, 80(1), 64–66. https://doi.org/10.1063/1.1429758
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