Hot carrier transport limits the displacive excitation of coherent phonons in bismuth

Abstract

We performed femtosecond transient reflectivity measurements on epitaxially grown bismuth (Bi) films in the weak photoexcitation regime. Single crystalline ultrathin Bi films down to a thickness of 7 nm enabled us to determine a clear correspondence between the amplitude of the coherent A 1 g phonon and the photoexcitation level. We were able to empirically measure the effective hot carrier penetration length that determines the excited carrier density governing the magnitude of the coherent A 1 g phonon in Bi. Our findings suggest that the transport behavior of hot carriers is to be taken into consideration in order to provide insights into the mechanism for the displacive excitation of coherent phonons.