Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

Abstract

The crystallization temperature of Bi1.5 Zn0.5 Nb1.5 O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures ≤400 °C makes integration with polymeric substrates possible. © 2005 American Institute of Physics.