Synthesis of Li4Ti5O12 Thin Film with Inverse Hemispheric Structure

Abstract

Li4Ti5O12 thin film with inverse hemispheric structure was fabricated on a Pt/Ti/SiO2/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at 400 °C. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the Li4Ti5O12 film with inverse hemispheric structure was superior to that of the flat Li4Ti 5O12 film.