Development and characteristic analysis of crystalline IGZO

Abstract

Crystalline indium gallium zinc oxide (c-IGZO) on glass substrate was deposited and characterized. The crystallinity of IGZO in the active layers is all highly crystallized by nano-beam electron diffraction (NBED) analysis. High-resolution transmission electron microscopy (HRTEM) image shows the formation of c- IGZO with c-axis alignment The main peak of the c-IGZO is in (009) planes by X-ray diffraction (XRD). The d-spacing in NBED pattern by comparing with the d-spacing of Silicon wafer in NBED pattern is 2.9 Å, which almost equals to the value of powder diffraction file (PDF) data base of In GaZn 04. [I].