Abstract
High-purity Si is produced by decompn. of SiI4 at > 1200 Deg, and it is produced by the following methods, viz.: impure SiI4 is produced from Si and I and recrystd. with toluene; sublimed under reduced pressure; and rectified in inert gas and purified by zone melting. I from decompn. of SiI4 is recycled. [on SciFinder (R)]
Cite
CITATION STYLE
APA
Litton, F. B., & Andersen, H. C. (1954). High Purity Silicon. Journal of The Electrochemical Society, 101(6), 287. https://doi.org/10.1149/1.2781249
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