Phase transition of Al2O3-encapsulated MoTe2via rapid thermal annealing

Abstract

Among group VI transition metal dichalcogenides, MoTe2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al2O3-encapsulated 2H-MoTe2 thin films to 1T′-MoTe2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation.