Optimized electrical properties of p-type field-effect transistors based on WSe2 grown at moderate temperatures

Abstract

Two-dimensional transition-metal dichalcogenides (TMDCs) have been pursued for high-performance logic electronic devices, and compatibility with silicon complementary metal-oxide-semiconductor (CMOS) technology is essential. Thus, high-quality material synthesis at reduced temperature is a key challenge for TMDC integration with the back-end-of-line silicon CMOS. In this work, TMDCs have been synthesized at temperatures down to 450 °C on SiO2/Si substrates via chemical vapor deposition. This work highlights the necessity of improving metal precursor mass flux during the low-temperature synthesis of TMDC films. Improved electrical characteristics of the back-gated p-type field-effect transistors based on monolayer WSe2 exhibit an on-current of 14 μA/μm and subthreshold swing of 200 mV/dec.