Properties of the planar poly(3-octylthiophene)/aluminum Schottky barrier diode

Abstract

Formation and characterization of planar polymer Schottky barrier diodes are presented. Electrical characteristics of planar aluminium-poly(3- octylthiophene) Schottky barrier diodes are studied with emphasis on the current transport mechanisms. The device exhibits nearly ideal diode behavior in dark with an ideality factor of n=1.2. Temperature dependence of the current-voltage characteristics of the diode is studied in the range 170-370 K. Agreement with the diffusion theory of metal-semiconductor rectification is demonstrated for high temperatures T≳300 K. For temperatures less than room temperatures tunneling is proposed to be the dominant current transport mechanism.