Structural and Optical Studies of In2S3 Thin Films Prepared by Sulferization of Indium Thin Films

Abstract

The In 2 S 3 thin film is prepared using sulfurate method under a vacuum in a sealed tube of amorphous indium thin film. The later film is pre-deposited on glass with thermal evaporation. We have studied the effect of the temperature and the annealing time on the structural and morphological properties In 2 S 3 thin films. The X-ray diffraction (XRD) shows a good crystallinity found until the annealing temperature reach 280°C for an annealing duration of 30 mn. The scanning electron microscopy (SEM) for the thin films of In 2 S 3 layer, synthesized at different temperature for the annealing time at 15mn, revealed more homogenous layer until 320°C. Optical analyses by absorption spectroscopy show that the energy band gap is a function of the annealing condition. This band gap decreases from 3 eV to 2.6 eV when the annealing temperature is varied from 200°C to 400°C. The obtained In 2 S 3 thin films have a transmittance higher than 65%.