Low-cost and high-performance 1.3-μm AlGaInAs- InP uncooled laser diodes

Abstract

In this letter, we utilize a self-terminated oxide polish (STOP) planarization technique to fabricate high-yield, high-performance, low-cost, and uncooled 1.3-μm ridge-waveguide AlGaInAs-InP laser diodes (LDs). The STOP technique is superior to the polyimide planarization, which suffers from high-temperature sustainability. The LDs fabricated by the STOP technique exhibit threshold currents of 8.5 and 30.5 mA, and light output powers of 25.9 and 4.8 mW at 100 mA for 20 °C and 110 °C, respectively. The characteristic temperatures (To) are 82.6 K from -30 °C to 80 °C and 55.9 K from 80 °C to 110 °C. Since the metal pad lies on a thick SiO2layer, the parasitic capacitance can be effectively lowered to 2 pF. The 3-dB modulation bandwidths of the LDs at 50 mA are 12.1 and 9.44 GHz at 20 °C and 90 °C, respectively. © 2006 IEEE.