Abstract
Experiments with aqueous electrolyte-insulator-semiconductor structures showed that Si3N4 is a satisfactory insulator on silicon whereas thermally grown SiO2 is not. The results can be explained in terms of microcrack formation in SiO2. The breakdown voltage was found to be relatively independent of the SiO2 thickness and crack sizes were estimated to be of the order of a few tens of ångströms. No electrically significant bulk hydration effects were found to occur in either insulator in mildly acidic solutions. © 1991.
Cite
CITATION STYLE
Cohen, R. M., Huber, R. J., Janata, J., Ure, R. W., & Moss, S. D. (1978). A study of insulator materials used in ISFET gates. Thin Solid Films, 53(2), 169–173. https://doi.org/10.1016/0040-6090(78)90031-7
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