Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond

Abstract

(2021) Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond, Functional Diamond, 1:1, 47-62, a national Key laboratory of Science and technology on advanced composites in Special Environments, Harbin institute of technology, Harbin, P.R. china; b Prokhorov General Physics institute, Russian academy of Sciences, moscow, Russia; c ministry of Education, Key laboratory of micro-systems and micro-structures manufacturing, Harbin, P.R. china ABSTRACT large size single crystal diamond (scD) wafer has been strongly desired for various of advanced applications, while two major potential approaches, including mosaic growth and heteroepitaxy based on chemical vapor deposition method, are both stuck with respective technical barriers. this paper reveals and summarizes the essential commonality of the two schemes, and denominates the concept of "coessential-connection" (cc) growth. such generalized concept involved the nature of the single crystal and polycrystalline diamond film deposition with similar mechanism and processes. the principle of cc growth process with detailed classification was elaborated, and influence of nucleus size and orientation mismatch was clarified, which is regarded as the core problem of large area scD film growth via coessential-connection process.