Anomalous p -channel amorphous oxide transistors based on tin oxide and their complementary circuits

Abstract

In this article, we report the fabrication of Sn O2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p -type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p -channel Sn O2 TFTs. The on/off ratio and the field-effect mobility were ∼ 103 and 0.011 cm2 V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p -channel oxide TFTs would open up new challenges in the area of transparent electronics. © 2008 American Institute of Physics.