Abstract
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed. © 1963-2012 IEEE.
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Wong, H. S. P., Lee, H. Y., Yu, S., Chen, Y. S., Wu, Y., Chen, P. S., … Tsai, M. J. (2012). Metal-oxide RRAM. In Proceedings of the IEEE (Vol. 100, pp. 1951–1970). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/JPROC.2012.2190369
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