Type II recombination and band offset determination in a tensile strained InGaAs quantum well

Abstract

Photoluminescence measurements under different excitation powers and time-resolved photoluminescence experiments were carried out at low temperature on tensile strained In0.3Ga0.7As quantum wells with InGaAs barriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in the lattice matched one. This study allows us to propose a precise determination of the light holes band offset in the In0.3Ga0.7AS/In0.53Ga0.47As system. © 1997 American Institute of Physics.